GA50JT17-247 GENESIC SEMICONDUCTOR TRANS SJT 1.7KV 100A 1700V (1.7kV) 100A (Tc) 583W (Tc) Through Hole TO-247

ProducentGENESIC SEMICONDUCTOR
Part Number

GA50JT17-247 (GA50JT17247)

Specifications

TRANS SJT 1.7KV 100A 1700V (1.7kV) 100A (Tc) 583W (Tc) Through Hole TO-247

Unit Price161,23 EUR
Minimum Order Quantity30
Tariff No.
Lead Time126 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer GeneSiC Semiconductor Series - Packaging Tube Part Status Active FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Vgs (Max) 3.42V FET Feature - Power Dissipation (Max) 583W (Tc) Rds On (Max) @ Id, Vgs 25 mOhm @ 50A Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
Datasheets
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