GA10SICP12-263 GENESIC SEMICONDUCTOR TRANS SJT 1200V 25A TO263-7 1200V (1.2kV) 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead)
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| Producent | GENESIC SEMICONDUCTOR | | Part Number | GA10SICP12-263 (GA10SICP12263) |
| Specifications | TRANS SJT 1200V 25A TO263-7 1200V (1.2kV) 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead) |
| Unit Price | 34,33 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 126 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer GeneSiC Semiconductor Series - Packaging Tube Part Status Active FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 1403pF @ 800V Vgs (Max) 3.5V FET Feature - Power Dissipation (Max) 170W (Tc) Rds On (Max) @ Id, Vgs 100 mOhm @ 10A Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK (7-Lead) Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Datasheets | |
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