GA20JT12-263 GENESIC SEMICONDUCTOR TRANS SJT 1200V 45A 1200V (1.2kV) 45A (Tc) 282W (Tc)
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| Producent | GENESIC SEMICONDUCTOR | | Part Number | GA20JT12-263 (GA20JT12263) |
| Specifications | TRANS SJT 1200V 45A 1200V (1.2kV) 45A (Tc) 282W (Tc) |
| Unit Price | 36,53 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 126 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer GeneSiC Semiconductor Series - Packaging - Part Status Active FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 3091pF @ 800V Vgs (Max) 3.44V FET Feature - Power Dissipation (Max) 282W (Tc) Rds On (Max) @ Id, Vgs 60 mOhm @ 20A Operating Temperature 175°C (TJ) Mounting Type - Supplier Device Package - Package / Case - |
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