GA06JT12-247 GENESIC SEMICONDUCTOR TRANS SJT 1200V 6A TO-247AB 1200V (1.2kV) 6A (Tc) (90°C) Through Hole TO-247AB

ProducentGENESIC SEMICONDUCTOR
Part Number

GA06JT12-247 (GA06JT12247)

Specifications

TRANS SJT 1200V 6A TO-247AB 1200V (1.2kV) 6A (Tc) (90°C) Through Hole TO-247AB

Unit Price9,86 EUR
Minimum Order Quantity30
Tariff No.
Lead Time126 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer GeneSiC Semiconductor Series - Packaging Tube Part Status Active FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 6A (Tc) (90°C) Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Rds On (Max) @ Id, Vgs 220 mOhm @ 6A Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AB Package / Case TO-247-3
Datasheets
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