GA50JT06-258 GENESIC SEMICONDUCTOR TRANS SJT 600V 100A 600V 100A (Tc) 769W (Tc) Through Hole TO-258

ProducentGENESIC SEMICONDUCTOR
Part Number

GA50JT06-258 (GA50JT06258)

Specifications

TRANS SJT 600V 100A 600V 100A (Tc) 769W (Tc) Through Hole TO-258

Unit Price639,87 EUR
Minimum Order Quantity10
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer GeneSiC Semiconductor Series - Packaging Bulk Part Status Active FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 769W (Tc) Rds On (Max) @ Id, Vgs 25 mOhm @ 50A Operating Temperature -55°C ~ 225°C (TJ) Mounting Type Through Hole Supplier Device Package TO-258 Package / Case TO-258-3, TO-258AA
Datasheets
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