2N7636-GA GENESIC SEMICONDUCTOR TRANS SJT 650V 4A TO276 650V 4A (Tc) (165°C) 125W (Tc) Surface Mount TO-276

ProducentGENESIC SEMICONDUCTOR
Part Number

2N7636-GA (2N7636GA)

Specifications

TRANS SJT 650V 4A TO276 650V 4A (Tc) (165°C) 125W (Tc) Surface Mount TO-276

Unit Price237,16 EUR
Minimum Order Quantity10
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Lead Time
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer GeneSiC Semiconductor Series - Packaging Tube Part Status Active FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 4A (Tc) (165°C) Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 324pF @ 35V FET Feature - Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 415 mOhm @ 4A Operating Temperature -55°C ~ 225°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-276 Package / Case TO-276AA
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