GP1M016A060N Global Power Technologies Group MOSFET N-CH 600V 16A TO3PN N-Channel 600V 16A (Tc) 312W (Tc) Through Hole TO-3PN
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| Producent | Global Power Technologies Group | | Part Number | GP1M016A060N (GP1M016A060N) |
| Specifications | MOSFET N-CH 600V 16A TO3PN N-Channel 600V 16A (Tc) 312W (Tc) Through Hole TO-3PN |
| Unit Price | 3,52 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Global Power Technologies Group Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3039pF @ 25V FET Feature - Power Dissipation (Max) 312W (Tc) Rds On (Max) @ Id, Vgs 470 mOhm @ 8A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3 |
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