GP1M003A080CH Global Power Technologies Group MOSFET N-CH 800V 3A DPAK N-Channel 800V 3A (Tc) 94W (Tc) Surface Mount TO-252, (D-Pak)

ProducentGlobal Power Technologies Group
Part Number

GP1M003A080CH (GP1M003A080CH)

Specifications

MOSFET N-CH 800V 3A DPAK N-Channel 800V 3A (Tc) 94W (Tc) Surface Mount TO-252, (D-Pak)

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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Global Power Technologies Group Series - Packaging Digi-Reel® Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 696pF @ 25V FET Feature - Power Dissipation (Max) 94W (Tc) Rds On (Max) @ Id, Vgs 4.2 Ohm @ 1.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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