S2381 Hamamatsu IR-photodiode 800 nm TO-18

ProducentHamamatsu
Part Number

S2381 (S2381)

Specifications

IR-photodiode 800 nm TO-18

Unit Price75,79 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionOff-state voltage 194 V Wavelength of max. photosensitivity 800 nm Photoelectric current N/A...490 mA Package TO-18 Dark current 1 nA Family Information The avalanche photo diode is the most sensitive semiconductor-based light sensor The photo current is the same as that of a conventional photo diode, but it is amplified by an electrical field in one layer The excited electrons excite other electrons and therefore produce a so-called "avalanche effect" The signal is amplified about 100 times Avalanche photo diodes react sensitively to voltage and temperature changes Environmental information RoHS Conform
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