BC859CE6327 Infineon Infineon BC859CE6327 PNP Bipolar Transistor, 100 mA 30 V, 3-pin SOT-23
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| Producent | Infineon | | Part Number | BC859CE6327 (BC859CE6327) |
| Specifications | Infineon BC859CE6327 PNP Bipolar Transistor, 100 mA 30 V, 3-pin SOT-23 |
| Unit Price | 327,90 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | CategoryAF Transistor ConfigurationSingle Dimensions2.9 x 1.3 x 0.9mm Height0.9mm Length2.9mm Maximum Base Emitter Saturation Voltage850 (Typ.) mV Maximum Collector Base Voltage30 V Maximum Collector Emitter Saturation Voltage650 mV Maximum Collector Emitter Voltage30 V Maximum DC Collector Current100 mA Maximum Emitter Base Voltage5 V Maximum Operating Frequency250 (Typ.) MHz Maximum Operating Temperature+150 °C Maximum Power Dissipation330 mW Minimum DC Current Gain420 Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeSOT-23 Pin Count3 Transistor TypePNP Width1.3mm Product Details General Purpose PNP Transistors, Infineon Bipolar Transistors, Infineon |
| Datasheets | |
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