BSC110N06NS3G Infineon Infineon BSC110N06NS3G N-channel MOSFET Transistor, 50 A, 60 V, 8-Pin TDSON-EP
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| Producent | Infineon | | Part Number | BSC110N06NS3G (BSC110N06NS3G) |
| Specifications | Infineon BSC110N06NS3G N-channel MOSFET Transistor, 50 A, 60 V, 8-Pin TDSON-EP |
| Unit Price | 0,76 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions6.1 x 5.49 x 1.1mm Height1.1mm Length6.1mm Maximum Continuous Drain Current50 A Maximum Drain Source Resistance11 mΩ Maximum Drain Source Voltage60 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation50 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTDSON-EP Pin Count8 Typical Gate Charge @ Vgs25 nC@ 10 V Typical Input Capacitance @ Vds2000 pF@ 30 V Typical Turn-Off Delay Time14 ns Typical Turn-On Delay Time10 ns Width5.49mm Product Details Infineon OptiMOS™3 Power MOSFETs, 60V and over OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs |
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