BSM200GA120DN2 Infineon Infineon, BSM200GA120DN2, IGBT Module, N-channel, 300 A max, 1200 V, 5-Pin 62MM
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| Producent | Infineon | | Part Number | BSM200GA120DN2 (BSM200GA120DN2) |
| Specifications | Infineon, BSM200GA120DN2, IGBT Module, N-channel, 300 A max, 1200 V, 5-Pin 62MM |
| Unit Price | 244,64 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationSingle Dimensions106.4 x 61.4 x 36.5mm Height36.5mm Length106.4mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current300 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation1550 W Mounting TypeScrew Mount Package Type62MM Pin Count5 Width61.4mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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