BSM400GA120DN2 Infineon Infineon, BSM400GA120DN2, IGBT Module, N-channel, Dual Emitter, 550 A max, 1200 V, 5-Pin 62MM

ProducentInfineon
Part Number

BSM400GA120DN2 (BSM400GA120DN2)

Specifications

Infineon, BSM400GA120DN2, IGBT Module, N-channel, Dual Emitter, 550 A max, 1200 V, 5-Pin 62MM

Unit Price451,29 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionChannel TypeN ConfigurationDual Emitter, Single Dimensions106.4 x 61.4 x 36.5mm Height36.5mm Length106.4mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current550 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation2700 W Mounting TypeScrew Mount Package Type62MM Pin Count5 Width61.4mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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