BSM50GB170DN2 Infineon Infineon, BSM50GB170DN2, IGBT Module, N-channel, Dual, 72 A max, 1700 V, 7-Pin 34MM
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| Producent | Infineon | | Part Number | BSM50GB170DN2 (BSM50GB170DN2) |
| Specifications | Infineon, BSM50GB170DN2, IGBT Module, N-channel, Dual, 72 A max, 1700 V, 7-Pin 34MM |
| Unit Price | 97,45 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationDual, Emitter-Collector Dimensions94 x 34 x 30.5mm Height30.5mm Length94mm Maximum Collector Emitter Voltage1700 V Maximum Continuous Collector Current72 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation500 W Mounting TypeScrew Mount Package Type34MM Pin Count7 Width34mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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