F3L75R07W2E3_B11 Infineon Infineon, F3L75R07W2E3_B11, IGBT Module, N-channel, Quad, 95 A max, 650 V, 27-Pin EASY2B
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| Producent | Infineon | | Part Number | F3L75R07W2E3_B11 (F3L75R07W2E3B11) |
| Specifications | Infineon, F3L75R07W2E3_B11, IGBT Module, N-channel, Quad, 95 A max, 650 V, 27-Pin EASY2B |
| Unit Price | 76,25 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationQuad Dimensions56.7 x 48 x 12mm Height12mm Length56.7mm Maximum Collector Emitter Voltage650 V Maximum Continuous Collector Current95 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation250 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeEASY2B Pin Count27 Switching Speed1MHz Width48mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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