FF225R12ME4_B11 Infineon Infineon, FF225R12ME4_B11, IGBT Module, N-channel, Dual, 320 A max, 1200 V, 11-Pin ECONOD
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| Producent | Infineon | | Part Number | FF225R12ME4_B11 (FF225R12ME4B11) |
| Specifications | Infineon, FF225R12ME4_B11, IGBT Module, N-channel, Dual, 320 A max, 1200 V, 11-Pin ECONOD |
| Unit Price | 167,53 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationDual Dimensions122.5 x 62.5 x 17mm Height17mm Length122.5mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current320 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation1050 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeECONOD Pin Count11 Switching Speed1MHz Width62.5mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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