FF300R12KS4 Infineon Infineon, FF300R12KS4, IGBT Transistor Module, N-channel, Dual, 370 A max, 1200 V, 3-pin
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| Producent | Infineon | | Part Number | FF300R12KS4 (FF300R12KS4) |
| Specifications | Infineon, FF300R12KS4, IGBT Transistor Module, N-channel, Dual, 370 A max, 1200 V, 3-pin |
| Unit Price | 313,41 EUR |
| Minimum Order Quantity | 1 |
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| Lead Time | |
| Weight and Dimension | |
| Description | Channel TypeN ConfigurationDual Dimensions106.4 x 61.4 x 30.9mm Height30.9mm Length106.4mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current370 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+125 °C Maximum Power Dissipation1950 W Minimum Operating Temperature-40 °C Mounting TypeScrew Pin Count3 Width61.4mm Product Details IGBT Modules, Infineon IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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