FS100R07N2E4_B11 Infineon Infineon, FS100R07N2E4_B11, IGBT Module, N-channel, Hex, 100 A max, 650 V, 25-pin Econo2
| |
|
| Producent | Infineon | | Part Number | FS100R07N2E4_B11 (FS100R07N2E4B11) |
| Specifications | Infineon, FS100R07N2E4_B11, IGBT Module, N-channel, Hex, 100 A max, 650 V, 25-pin Econo2 |
| Unit Price | 118,65 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | |
| Description | Channel TypeN ConfigurationHex Dimensions107.5 x 45 x 17mm Height17mm Length107.5mm Maximum Collector Emitter Voltage650 V Maximum Continuous Collector Current100 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation335 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeECONO2 Pin Count25 Switching Speed1MHz Width45mm Product Details IGBT Modules, Infineon IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
