FS30R06W1E3_B11 Infineon Infineon, FS30R06W1E3_B11, IGBT Module, N-channel, Hex, 45 A max, 600 V, 22-Pin EASY1B
| |
|
| Producent | Infineon | | Part Number | FS30R06W1E3_B11 (FS30R06W1E3B11) |
| Specifications | Infineon, FS30R06W1E3_B11, IGBT Module, N-channel, Hex, 45 A max, 600 V, 22-Pin EASY1B |
| Unit Price | 36,89 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | |
| Description | Channel TypeN ConfigurationHex Dimensions48 x 33.8 x 12mm Height12mm Length48mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current45 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation150 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeEASY1B Pin Count22 Switching Speed1MHz Width33.8mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
