FS50R07N2E4 Infineon Infineon, FS50R07N2E4, IGBT Module, N-channel, Hex, 70 A max, 650 V, 28-Pin Econo2
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| Producent | Infineon | | Part Number | FS50R07N2E4 (FS50R07N2E4) |
| Specifications | Infineon, FS50R07N2E4, IGBT Module, N-channel, Hex, 70 A max, 650 V, 28-Pin Econo2 |
| Unit Price | 109,04 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationHex Dimensions107.5 x 45 x 17mm Height17mm Length107.5mm Maximum Collector Emitter Voltage650 V Maximum Continuous Collector Current70 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation190 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeECONO2 Pin Count28 Switching Speed1MHz Width45mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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