FS75R12KE3 Infineon Infineon, FS75R12KE3, IGBT Module, N-channel, Hex (3 x Dual), 105 A max, 1200 V, 28-Pin EconoPACK2

ProducentInfineon
Part Number

FS75R12KE3 (FS75R12KE3)

Specifications

Infineon, FS75R12KE3, IGBT Module, N-channel, Hex (3 x Dual), 105 A max, 1200 V, 28-Pin EconoPACK2

Unit Price150,53 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionChannel TypeN ConfigurationEmitter-Collector, Hex (3 x Dual) Dimensions107.5 x 45 x 17mm Height17mm Length107.5mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current105 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+125 °C Maximum Power Dissipation350 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeEconoPACK2 Pin Count28 Width45mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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