FS75R12KE3G Infineon Infineon, FS75R12KE3G, IGBT Module, N-channel, Hex, 100 A max, 1200 V, 35-Pin ECONO3
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| Producent | Infineon | | Part Number | FS75R12KE3G (FS75R12KE3G) |
| Specifications | Infineon, FS75R12KE3G, IGBT Module, N-channel, Hex, 100 A max, 1200 V, 35-Pin ECONO3 |
| Unit Price | 220,86 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationHex Dimensions122 x 62 x 17mm Height17mm Length122mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current100 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+125 °C Maximum Power Dissipation355 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeECONO3 Pin Count35 Switching Speed1MHz Width62mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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