IPD50N03S4L-06 Infineon Infineon IPD50N03S4L-06 N-channel MOSFET Transistor, 3-pin TO-252
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Producent | Infineon | Part Number | IPD50N03S4L-06 (IPD50N03S4L06) |
Specifications | Infineon IPD50N03S4L-06 N-channel MOSFET Transistor, 3-pin TO-252 |
Unit Price | 601,39 EUR |
Minimum Order Quantity | 1 |
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Description | CategoryPower Transistor Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions6.73 x 6.22 x 2.41mm Height2.41mm Length6.73mm Maximum Continuous Drain Current50 A Maximum Drain Source Resistance5.5 mΩ Maximum Drain Source Voltage30 V Maximum Gate Source Voltage±16 V Maximum Operating Temperature+175 °C Maximum Power Dissipation56 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTO-252 Pin Count3 Typical Gate Charge @ Vgs24 nC@ 10 V Typical Input Capacitance @ Vds1790 pF@ 25 V Typical Turn-Off Delay Time19 ns Typical Turn-On Delay Time3 ns Width6.22mm Product Details Infineon OptiMOS™ T2 Power MOSFETs Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement modeAEC qualifiedMSL1 up to 260°C peak reflow175°C operating temperatureGreen Product (RoHS compliant) MOSFET Transistors, Infineon Infineons large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs |
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