IPI100N04S4-H2 Infineon Infineon IPI100N04S4-H2 N-channel MOSFET Transistor, 3-pin TO-262
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| Producent | Infineon | | Part Number | IPI100N04S4-H2 (IPI100N04S4H2) |
| Specifications | Infineon IPI100N04S4-H2 N-channel MOSFET Transistor, 3-pin TO-262 |
| Unit Price | 1,08 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryPower Transistor Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10 x 4.4 x 9.25mm Height9.25mm Length10mm Maximum Continuous Drain Current100 A Maximum Drain Source Resistance2.7 mΩ Maximum Drain Source Voltage40 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+175 °C Maximum Power Dissipation115 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-262 Pin Count3 Typical Gate Charge @ Vgs70 nC@ 10 V Typical Input Capacitance @ Vds5520 pF@ 25 V Typical Turn-Off Delay Time19 ns Typical Turn-On Delay Time18 ns Width4.4mm Product Details Infineon OptiMOS™ T2 Power MOSFETs Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement modeAEC qualifiedMSL1 up to 260°C peak reflow175°C operating temperatureGreen Product (RoHS compliant) MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs |
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