IPI60R250CPAKSA1 Infineon Infineon IPI60R250CPAKSA1 N-channel MOSFET Transistor, 12 A, 650 V, 3-pin TO-262
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| Producent | Infineon | | Part Number | IPI60R250CPAKSA1 (IPI60R250CPAKSA1) |
| Specifications | Infineon IPI60R250CPAKSA1 N-channel MOSFET Transistor, 12 A, 650 V, 3-pin TO-262 |
| Unit Price | 2,22 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryPower Transistor Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.36 x 4.52 x 9.45mm Height9.45mm Length10.36mm Maximum Continuous Drain Current12 A Maximum Drain Source Resistance0.25 Ω Maximum Drain Source Voltage650 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation104 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-262 Pin Count3 Typical Gate Charge @ Vgs26 nC@ 10 V Typical Input Capacitance @ Vds1200 pF@ 100 V Typical Turn-Off Delay Time110 ns Typical Turn-On Delay Time40 ns Width4.52mm Product Details Infineon CoolMOS™ Power MOSFET Family This Range of MOSFET Transistors by Infineon combines all benefits of fast switching Superjunction MOSFETs with the ease of use. Such as low area specific on-state resistance and reduced energy stored in output capacitance, the 500V CoolMOS™ CE series provides a high body diode ruggedness, achieves extremely low conduction and switching losses and can make switching applications more efficient, more compact, lighter and cooler. Reduced energy stored in output capacitance High body diode ruggedness (E oss)Reduced reverse recovery charge (Q rr)Reduced gate charge (Q g)Easy control of switching behaviour MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs |
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