IPI80N06S2L-05 Infineon Infineon IPI80N06S2L-05 N-channel MOSFET Module, 80 A, 55 V, 3-pin TO-262
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| Producent | Infineon | | Part Number | IPI80N06S2L-05 (IPI80N06S2L05) |
| Specifications | Infineon IPI80N06S2L-05 N-channel MOSFET Module, 80 A, 55 V, 3-pin TO-262 |
| Unit Price | 1,35 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryPower Transistor Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10 x 4.4 x 9.25mm Height9.25mm Length10mm Maximum Continuous Drain Current80 A Maximum Drain Source Resistance4.8 mΩ Maximum Drain Source Voltage55 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+175 °C Maximum Power Dissipation300 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-262 Pin Count3 Typical Gate Charge @ Vgs170 nC@ 10 V Typical Input Capacitance @ Vds5700 pF@ 25 V Typical Turn-Off Delay Time67 ns Typical Turn-On Delay Time19 ns Width4.4mm Product Details Infineon OptiMOS™ Power MOSFET Family OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement modeAutomotive AEC Q101 qualifiedMSL1 up to 260°C peak reflow175°C operating temperatureGreen package (lead free)Ultra low Rds(on) MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs |
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