IPP037N06L3 G Infineon Infineon IPP037N06L3 G N-channel MOSFET Transistor, 3-pin PG-TO-220-3

ProducentInfineon
Part Number

IPP037N06L3 G (IPP037N06L3G)

Specifications

Infineon IPP037N06L3 G N-channel MOSFET Transistor, 3-pin PG-TO-220-3

Unit Price1,60 EUR
Minimum Order Quantity1
Tariff No.
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Weight and Dimension
DescriptionCategoryDC/DC Converter, High Frequency Switching, Synchronous Rectification Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.36 x 15.95 x 4.57mm Height4.57mm Length10.36mm Maximum Continuous Drain Current90 A Maximum Drain Source Resistance3.7 mΩ Maximum Drain Source Voltage60 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+175 °C Maximum Power Dissipation167 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypePG-TO-220-3 Pin Count3 Typical Gate Charge @ Vgs59 nC V @ 0 → 4.5 Typical Input Capacitance @ Vds10000 pF V @ 30 Typical Turn-Off Delay Time64 ns Typical Turn-On Delay Time25 ns Width15.95mm Product Details Infineon OptiMOS™3 Power MOSFETs, 60V and over OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs
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