IPP70N10S3L-12 Infineon Infineon IPP70N10S3L-12 N-channel MOSFET Transistor, 70 A, 100 V, 3-pin TO-220
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| Producent | Infineon | | Part Number | IPP70N10S3L-12 (IPP70N10S3L12) |
| Specifications | Infineon IPP70N10S3L-12 N-channel MOSFET Transistor, 70 A, 100 V, 3-pin TO-220 |
| Unit Price | 0,82 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryPower Transistor Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10 x 4.4 x 15.65mm Height15.65mm Length10mm Maximum Continuous Drain Current70 A Maximum Drain Source Resistance15.8 mΩ Maximum Drain Source Voltage100 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+175 °C Maximum Power Dissipation125 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-220 Pin Count3 Typical Gate Charge @ Vgs60 nC@ 10 V Typical Input Capacitance @ Vds4270 pF@ 25 V Typical Turn-Off Delay Time28 ns Typical Turn-On Delay Time10 ns Width4.4mm Product Details Infineon OptiMOS™T Power MOSFETs OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs |
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