IPP80N04S2-04 Infineon Infineon IPP80N04S2-04 N-channel MOSFET Transistor, 80 A, 40 V, 3-pin TO-220
| |
|
| Producent | Infineon | | Part Number | IPP80N04S2-04 (IPP80N04S204) |
| Specifications | Infineon IPP80N04S2-04 N-channel MOSFET Transistor, 80 A, 40 V, 3-pin TO-220 |
| Unit Price | 1,58 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | |
| Description | CategoryPower Transistor Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10 x 4.4 x 15.65mm Height15.65mm Length10mm Maximum Continuous Drain Current80 A Maximum Drain Source Resistance3.7 mΩ Maximum Drain Source Voltage40 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+175 °C Maximum Power Dissipation300 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-220 Pin Count3 Typical Gate Charge @ Vgs127 nC@ 10 V Typical Input Capacitance @ Vds5300 pF@ 25 V Typical Turn-Off Delay Time56 ns Typical Turn-On Delay Time26 ns Width4.4mm Product Details Infineon OptiMOS™ Power MOSFET Family OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement modeAutomotive AEC Q101 qualifiedMSL1 up to 260°C peak reflow175°C operating temperatureGreen package (lead free)Ultra low Rds(on) MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
