BFP 640 H6327 Infineon RF BIP TRANSISTORS
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| Producent | Infineon | | Part Number | BFP 640 H6327 (BFP640H6327) |
| Specifications | RF BIP TRANSISTORS |
| Unit Price | 0,81 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412100 |
| Lead Time | |
| Weight and Dimension | 0.0000 Kg |
| Description | Collector Emitter Voltage V(br)ceo: 4.5V DC Collector Current: 50mA DC Current Gain hFE: 110 MSL: MSL 1 - Unlimited No. of Pins: 4 Operating Temperature Max: 150°C Power Dissipation Pd: 200mW RF Transistor Case: SOT-343 SVHC: No SVHC (16-Jun-2014) Transistor Polarity: NPN Transition Frequency ft: 40GHz INFINEON-BFP 640 H6327-RF BIP TRANSISTORS;RF BIP TRANSISTORS; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:40GHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:110; RF Transistor Case:SOT-343; No. of Pins:4; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (16-Jun-2014) |
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