BC 857S H6327 INFINEON TECHNOLOGIES Bipolar Transistors - BJT AF TRANSISTOR
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Producent | INFINEON TECHNOLOGIES | Part Number | BC 857S H6327 (BC857SH6327) |
Specifications | Bipolar Transistors - BJT AF TRANSISTOR |
Unit Price | 0,32 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 13 weeks |
Weight and Dimension | |
Description | Infineon Product Category: Bipolar Transistors - BJT RoHS: Details Brand: Infineon Technologies Configuration: Dual Transistor Polarity: PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 250 mV Maximum DC Collector Current: 200 mA Gain Bandwidth Product fT: 250 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-363 DC Collector/Base Gain hFE Min: 200 DC Current Gain hFE Max: 630 Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Packaging: Reel Series: BC857 Factory Pack Quantity: 3000 Part # Aliases: BC857SH6327XTSA1 SP000747456 |
Datasheets | |
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