BC 860BW H6327 INFINEON TECHNOLOGIES Bipolar Transistors - BJT AF TRANSISTOR

ProducentINFINEON TECHNOLOGIES
Part Number

BC 860BW H6327 (BC860BWH6327)

Specifications

Bipolar Transistors - BJT AF TRANSISTOR

Unit Price0,26 EUR
Minimum Order Quantity1
Tariff No.
Lead Time8 weeks
Weight and Dimension
DescriptionInfineon Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: Infineon Technologies Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 250 mV Maximum DC Collector Current: 200 mA Gain Bandwidth Product fT: 250 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-323-3 DC Collector/Base Gain hFE Min: 420 at 2 mA at 5 V DC Current Gain hFE Max: 800 at 2 mA at 5 V Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 65 C Packaging: Reel Series: BC860 Factory Pack Quantity: 3000 Technology: Si Part # Aliases: BC860BWH6327XTSA1 SP000747586
Datasheets
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