FS50R07W1E3_B11A INFINEON TECHNOLOGIES IGBT Modules
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Producent | INFINEON TECHNOLOGIES | Part Number | FS50R07W1E3_B11A (FS50R07W1E3B11A) |
Specifications | IGBT Modules |
Unit Price | 47,42 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 9 weeks |
Weight and Dimension | |
Description | Infineon Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Single Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 70 A Gate-Emitter Leakage Current: 400 nA Power Dissipation: 205 W Maximum Operating Temperature: + 150 C Package/Case: EasyPack1B Brand: Infineon Technologies Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Through Hole Series: FS50R07W1 Factory Pack Quantity: 24 Part # Aliases: SP000865118 |
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