IPG20N10S4L22AATMA1 INFINEON TECHNOLOGIES MOSFET 2N-CH 100V 20A TDSON-8 Mosfet Array 2 N-Channel (Dual) 100V 20A 60W Surface Mount PG-TDSON-8-10

ProducentINFINEON TECHNOLOGIES
Part Number

IPG20N10S4L22AATMA1 (IPG20N10S4L22AATMA1)

Specifications

MOSFET 2N-CH 100V 20A TDSON-8 Mosfet Array 2 N-Channel (Dual) 100V 20A 60W Surface Mount PG-TDSON-8-10

Unit Price1,30 EUR
Minimum Order Quantity1
Tariff No.
Lead Time182 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 22 mOhm @ 17A, 10V Vgs(th) (Max) @ Id 2.1V @ 25µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V Power - Max 60W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-10
Datasheets
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