BSC082N10LSGATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 100V 100A 8TDSON N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8

ProducentINFINEON TECHNOLOGIES
Part Number

BSC082N10LSGATMA1 (BSC082N10LSGATMA1)

Specifications

MOSFET N-CH 100V 100A 8TDSON N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8

Unit Price1,81 EUR
Minimum Order Quantity1
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 13.8A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.4V @ 110µA Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 7400pF @ 50V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 156W (Tc) Rds On (Max) @ Id, Vgs 8.2 mOhm @ 100A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8 Package / Case 8-PowerTDFN
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