IPP045N10N3GXKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 100V 100A TO220-3 N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO-220-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPP045N10N3GXKSA1 (IPP045N10N3GXKSA1)

Specifications

MOSFET N-CH 100V 100A TO220-3 N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO-220-3

Unit Price1,81 EUR
Minimum Order Quantity500
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Vgs(th) (Max) @ Id 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 214W (Tc) Rds On (Max) @ Id, Vgs 4.5 mOhm @ 100A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3
Datasheets
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