IRFB4110GPBF INFINEON TECHNOLOGIES MOSFET N-CH 100V 120A TO220AB N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IRFB4110GPBF (IRFB4110GPBF) |
| Specifications | MOSFET N-CH 100V 120A TO220AB N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB |
| Unit Price | 4,31 EUR |
| Minimum Order Quantity | 50 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 370W (Tc) Rds On (Max) @ Id, Vgs 4.5 mOhm @ 75A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
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