IPD78CN10NGATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 100V 13A TO252-3 N-Channel 100V 13A (Tc) 31W (Tc) Surface Mount PG-TO252-3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPD78CN10NGATMA1 (IPD78CN10NGATMA1) |
| Specifications | MOSFET N-CH 100V 13A TO252-3 N-Channel 100V 13A (Tc) 31W (Tc) Surface Mount PG-TO252-3 |
| Unit Price | 0,22 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 31W (Tc) Rds On (Max) @ Id, Vgs 78 mOhm @ 13A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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