IRLSL4030PBF INFINEON TECHNOLOGIES MOSFET N-CH 100V 180A TO-262 N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-262
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Producent | INFINEON TECHNOLOGIES | Part Number | IRLSL4030PBF (IRLSL4030PBF) |
Specifications | MOSFET N-CH 100V 180A TO-262 N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-262 |
Unit Price | 3,64 EUR |
Minimum Order Quantity | 50 |
Tariff No. | |
Lead Time | 84 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 11360pF @ 50V Vgs (Max) ±16V FET Feature - Power Dissipation (Max) 370W (Tc) Rds On (Max) @ Id, Vgs 4.3 mOhm @ 110A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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