IPB47N10S-33 INFINEON TECHNOLOGIES MOSFET N-CH 100V 47A TO263-3 N-Channel 100V 47A (Tc) 175W (Tc) Surface Mount PG-TO263-3-2

ProducentINFINEON TECHNOLOGIES
Part Number

IPB47N10S-33 (IPB47N10S33)

Specifications

MOSFET N-CH 100V 47A TO263-3 N-Channel 100V 47A (Tc) 175W (Tc) Surface Mount PG-TO263-3-2

Unit Price1,66 EUR
Minimum Order Quantity1
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series SIPMOS® Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Vgs(th) (Max) @ Id 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V FET Feature - Power Dissipation (Max) 175W (Tc) Rds On (Max) @ Id, Vgs 33 mOhm @ 33A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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