IPD122N10N3 G INFINEON TECHNOLOGIES MOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPD122N10N3 G (IPD122N10N3G) |
| Specifications | MOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3 |
| Unit Price | 1,82 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 20 weeks |
| Weight and Dimension | |
| Description | Infineon Product Category: MOSFET RoHS: Details Brand: Infineon Technologies Id - Continuous Drain Current: 59 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 12.2 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 94 W Mounting Style: SMD/SMT Package/Case: DPAK-3 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 5 ns Minimum Operating Temperature: - 55 C Rise Time: 8 ns Series: OptiMOS 3 Factory Pack Quantity: 2500 Tradename: OptiMOS Typical Turn-Off Delay Time: 24 ns Part # Aliases: IPD122N10N3GBTMA1 SP000485966 |
| Datasheets | |
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