IRFB59N10DPBF INFINEON TECHNOLOGIES MOSFET N-CH 100V 59A TO-220AB N-Channel 100V 59A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IRFB59N10DPBF (IRFB59N10DPBF) |
| Specifications | MOSFET N-CH 100V 59A TO-220AB N-Channel 100V 59A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB |
| Unit Price | 2,89 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 98 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 59A (Tc) Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs 25 mOhm @ 35.4A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
| Datasheets | |
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