IPD122N10N3GBTMA1 INFINEON TECHNOLOGIES MOSFET N-CH 100V 59A TO252-3 N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPD122N10N3GBTMA1 (IPD122N10N3GBTMA1) |
| Specifications | MOSFET N-CH 100V 59A TO252-3 N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3 |
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| Minimum Order Quantity | 2.5 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 59A (Tc) Vgs(th) (Max) @ Id 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V FET Feature - Power Dissipation (Max) 94W (Tc) Rds On (Max) @ Id, Vgs 12.2 mOhm @ 46A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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