IPP12CN10LGXKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 100V 69A TO220-3 N-Channel 100V 69A (Tc) 125W (Tc) Through Hole PG-TO-220-3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPP12CN10LGXKSA1 (IPP12CN10LGXKSA1) |
| Specifications | MOSFET N-CH 100V 69A TO220-3 N-Channel 100V 69A (Tc) 125W (Tc) Through Hole PG-TO-220-3 |
| Unit Price | 1,36 EUR |
| Minimum Order Quantity | 500 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 69A (Tc) Vgs(th) (Max) @ Id 2.4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 50V FET Feature - Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 12 mOhm @ 69A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3 |
| Datasheets | |
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