IRF7853PBF INFINEON TECHNOLOGIES MOSFET N-CH 100V 8.3A 8-SOIC N-Channel 100V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

ProducentINFINEON TECHNOLOGIES
Part Number

IRF7853PBF (IRF7853PBF)

Specifications

MOSFET N-CH 100V 8.3A 8-SOIC N-Channel 100V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

Unit Price1,31 EUR
Minimum Order Quantity95
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 2.5W (Ta) Rds On (Max) @ Id, Vgs 18 mOhm @ 8.3A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
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