IRFB33N15DPBF INFINEON TECHNOLOGIES MOSFET N-CH 150V 33A TO-220AB N-Channel 150V 33A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB

ProducentINFINEON TECHNOLOGIES
Part Number

IRFB33N15DPBF (IRFB33N15DPBF)

Specifications

MOSFET N-CH 150V 33A TO-220AB N-Channel 150V 33A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB

Unit Price2,46 EUR
Minimum Order Quantity50
Tariff No.
Lead Time98 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs 56 mOhm @ 20A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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