IPP200N15N3GHKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 150V 50A TO220-3 N-Channel 150V 50A (Tc) 150W (Tc) Through Hole PG-TO-220-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPP200N15N3GHKSA1 (IPP200N15N3GHKSA1)

Specifications

MOSFET N-CH 150V 50A TO220-3 N-Channel 150V 50A (Tc) 150W (Tc) Through Hole PG-TO-220-3

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Minimum Order Quantity500
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Vgs(th) (Max) @ Id 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 75V FET Feature - Power Dissipation (Max) 150W (Tc) Rds On (Max) @ Id, Vgs 20 mOhm @ 50A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3
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