IRFP4668PBF INFINEON TECHNOLOGIES MOSFET N-CH 200V 130A TO-247AC N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC
| |
|
| Producent | INFINEON TECHNOLOGIES | | Part Number | IRFP4668PBF (IRFP4668PBF) |
| Specifications | MOSFET N-CH 200V 130A TO-247AC N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC |
| Unit Price | 5,00 EUR |
| Minimum Order Quantity | 25 |
| Tariff No. | |
| Lead Time | 70 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 241nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 10720pF @ 50V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 520W (Tc) Rds On (Max) @ Id, Vgs 9.7 mOhm @ 81A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
