IRFS31N20DPBF INFINEON TECHNOLOGIES MOSFET N-CH 200V 31A D2PAK N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Surface Mount D2PAK
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IRFS31N20DPBF (IRFS31N20DPBF) |
| Specifications | MOSFET N-CH 200V 31A D2PAK N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Surface Mount D2PAK |
| Unit Price | 2,34 EUR |
| Minimum Order Quantity | 50 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 3.1W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs 82 mOhm @ 18A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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