IPP320N20N3 G INFINEON TECHNOLOGIES MOSFET N-CH 200V 34A TO220-3 N-Channel 200V 34A (Tc) 136W (Tc) Through Hole PG-TO-220-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPP320N20N3 G (IPP320N20N3G)

Specifications

MOSFET N-CH 200V 34A TO220-3 N-Channel 200V 34A (Tc) 136W (Tc) Through Hole PG-TO-220-3

Unit Price2,16 EUR
Minimum Order Quantity500
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 136W (Tc) Rds On (Max) @ Id, Vgs 32 mOhm @ 34A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3
Datasheets
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